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The Growth and Characterization of Epitaxial Fluoride Films on Semiconductors

Published online by Cambridge University Press:  22 February 2011

Julia M. Phillips  and
J. M. Gibson
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill., New Jersey 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill., New Jersey 07974
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Abstract

This review considers the growth and characterization of epitaxial alkaline earth fluoride compounds on semiconductors. The field has developed quite rapidly in recent years, from the original demonstration of epitaxial growth in these systems to the investigation of the structure and properties of the layers. Two recent developments are reviewed in detail: the epitaxial relations which have been discovered between fluoride films and semiconductor substrates and the variety of interface structures which these systems display. These findings are beginning to lead to an understanding of the epitaxial growth process in these systems and how it relates to that in other more thoroughly studied systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 381
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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