Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-21T06:32:27.997Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterizations of Gaas on Inp with Different Buffer Structures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

Xiaoming Liu ,
Henry P. Lee ,
Shyh Wang ,
Thomas George ,
Eicke R. Weber  and
Zuzanna Liliental-Weber
Xiaoming Liu
Affiliation:
on leave from Tsinghua University, Beijing. The people's Republic of China.
Henry P. Lee
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA. 94720
Shyh Wang
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA. 94720
Thomas George
Affiliation:
Department of Materials Science and Mineral EngineeringUniversity of California, Berkeley, CA. 94720
Eicke R. Weber
Affiliation:
Department of Materials Science and Mineral EngineeringUniversity of California, Berkeley, CA. 94720
Zuzanna Liliental-Weber
Affiliation:
Center for Advanced Materials and, Material and Chemical Sciences Division, Lawrence Berkeley LaboratoryUniversity of California, Berkeley, CA 94720
Get access

Abstract

We report the growth and characterizations of 31μm thick GaAs films grown on (100) InP substrates by MBE employing different buffer layer structures during the initial deposition. The buffer layer structures under study are: 1) GaAs layer grown at low temperature; 2) GaAs layer grown at low temperature plus two sets of In0.08Ga0.92As/GaAs strained layer superlattices (SLS) and 3) a transitional compositionally graded InxGal-xAs layer between the InP substrate and the GaAs film. After the buffer layer deposition, the growth was continued by conventionalMBE to a total thickness of 3μm for all samples. From the 77K photoluminescence (PL) measurement, it was found that the sample with SLS layers has the highest PL intensity and the narrowest PL linewidth. Cross-sectional transmission electron microscopy (TEM) studies showed that the SLS is effective in reducing the propagation of threading dislocations and explains the observed superior optical quality from the PL measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 297
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lo, Y.H., Deri, R.J., Harbison, J., Skromme, B.J., Seto, M., Hwang, D.M., and Lee, T.P., Appl.Phys.Lett. 53, 1242(1988).CrossRefGoogle Scholar
2 Agarwala, S., Patil, M.B., Peng, C.K., and Morkoc, H., Appl.Phys.Lett. 53, 493(1988).Google Scholar
3 Chang-Hasnain, C.J., Lo, Y.H., Bhat, R., Stoffel, N.G., and Lee, T.P., Appl.Phys.Lett. 54, 156(1989).Google Scholar
4 Adachi, Sadao, J.Appl.Phys. 53(12), 8775, Dec.1982.Google Scholar
5 Al-Jassim, M.M., Nishioka, T., Itoh, Y., Usmsmoto, A., Yamaguchi, M., Mat. Res. Soc. Sump. Proc. Vol.116, P141.CrossRefGoogle Scholar