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Growth and Stability of Strained-Layer Multiple Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Shigeru Niki ,
Yunosuke Maktta ,
Akimasa Yamada  and
Junichi Shimada
Shigeru Niki
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Yunosuke Maktta
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Akimasa Yamada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Junichi Shimada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
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Abstract

Thirty-period In0.28Ga0.72As(100Å)/GaAs (100Å) multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (lOO)-oriented GaAs substrate with a 0.5μm-thick InyGa1-yAs (0≤y≤0.28) buffer layer interposed between the QW layer and the GaAs substrate. The MQWs with y close to the average InAs mole fraction of the QW layer exhibited good crystalline quality. It indicates that the strain is well-balanced between the GaAs and In0.28Ga0.72As layer. A significant change in their photoluminescence spectra has been observed when annealed above 750δC by means of rapid thermal annealing, implying a structural disorder in the QW“region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 201
Copyright
Copyright © Materials Research Society 1992

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References

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