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Growth -Front Modulation in Lamp Zone Melting of Si on SiO2

Published online by Cambridge University Press:  28 February 2011

D. Dutartre ,
D. Bensahel  and
M. Haond
D. Dutartre
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243, Meylan - Cedex, France
D. Bensahel
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243, Meylan - Cedex, France
M. Haond
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243, Meylan - Cedex, France
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Abstract

We present 3 techniques of defect localization we have studied in order to produce Silicon On Insulator films obtained by Lamp Zone Melting. They consist in a periodical variation of the thickness of either the oxide cap, or the polysilicon film, or the underlying oxide layer. We compare the crystallographic quality of the resulting films and in-situ observations of the solidification front for each structure.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 561
Copyright
Copyright © Materials Research Society 1987

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References

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