Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-31T12:49:14.451Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Bismuth Telluride Thin Films by Hot Wall Epitaxy, Thermoelectric Properties

Published online by Cambridge University Press:  10 February 2011

J. C. Tedenac ,
S. Dal Corso ,
A. Haidoux ,
S. Charar  and
B. Liautard
J. C. Tedenac
Affiliation:
LPMC - UMR5617, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 05 Fr.tedenac@univ-montp2.fr, charar@ges.univ-monpt2.fr
S. Dal Corso
Affiliation:
MEDCOS S.A., Cap Alpha, Av. de l'Europe, Clapiers, 34940 Montpellier Cdex 09 Fr., nouaoura@medcos.com., www.medcos.com
A. Haidoux
Affiliation:
LPMC - UMR5617, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 05 Fr.tedenac@univ-montp2.fr, charar@ges.univ-monpt2.fr
S. Charar
Affiliation:
GES - UMR 5650, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 05 Fr.tedenac@univ-montp2.fr, charar@ges.univ-monpt2.fr
B. Liautard
Affiliation:
LPMC - UMR5617, Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier Cedex 05 Fr.tedenac@univ-montp2.fr, charar@ges.univ-monpt2.fr
Get access

Abstract

It is well known that bismuth telluride (Bi2Te3), its isomorphs (Bi2Se3 and Sb2Te3) and their alloys have the optimum bandgap (0.13 eV to 0.21 eV) for efficient solid state cooling applications around 300 K. Recently interesting work argued that the use of quantum well structures can enhance the figure of merit ZT as a result of the improvement of carrier charge density of state and the reduction of the thermal conductivity. However, for the production of such structures it is necessary to establish the optimum growth conditions and the doping levels of thin films based on Bi2Te3 and its isomorphs.

In this paper we report on the growth characteristics of Bi2Te3 ternary alloys (even quaternary) thin films elaborated by the Hot Wall Epitaxy (HWE) technique. Ternary alloys based on bismuth telluride have been deposited as thin films on silicon and silica substrates. Hot Wall Epitaxy have been demonstrated to be a suitable technique in chalcogenides growth. These films are formed in a closed chamber, that make possible to keep substrates at relatively high temperature Ts without selective loss of individual components from condensate. Experimental procedures, such as substrate and source materials preparations, have been described in our previous publications. Thin films obtained are well oriented (001) and have block single-crystal structure. These films were studied by microstructural investigations and electrical measurements (electrical conductivity σ, Hall coefficient RH and Hall mobility μn) in the temperature range from liquid nitrogen to 570 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 93
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gardes, B., Ameziane, J., Brun, G., Tedenac, J.C., Boyer, A., J. Mater. Sc. 29, p 2751 (1994)CrossRefGoogle Scholar
[2] Mzerd, A., Sayah, D., Tedenac, J.C., Boyer, A., Int. J. Electronics, 77, p. 291 (1994)CrossRefGoogle Scholar
[3] Mzerd, A., Sayah, D., Tedenac, J.C., Boyer, A., J. Cryst. Growth, 140, p. 365 (1994)CrossRefGoogle Scholar
[4] Marhoun, F., ThesisMontpellier, p. 20 (1997)Google Scholar
[5] Rowe, D.M., “CRC Handbook of Thermoelectrics”, ed. ROWE, D.M., CRC press Inc. (1995).Google Scholar
[6] Hanney, N.B., “Semiconductors”, Chapmann & all, London, (1960), p. 32.Google Scholar
[7] Shigetomi, S., Mori, S., J. Phys. Soc. Japan, 11, (1956), p. 915.CrossRefGoogle Scholar
[8] Satterthaite, C.B., Ure, R.W., Phys. Rev, 108, (1957), p. 108.Google Scholar
[9] Mansfield, R., Williams, W., Proc. Phys. Soc, 72, (1958), p. 733.CrossRefGoogle Scholar
[10] Champness, C.H., Kipling, A.L., Canad. J. Phys, 44, (1966), p.769.CrossRefGoogle Scholar
[11] Boikov, Y.A., Gribanova, O.S., Danilov, V.A., Deryagina, I.M., “Proc. 8th Conf; Thermoelec. Energy Conversion”, Ed INPL, (1989), p.18.Google Scholar
[12] Boikov, Y.A., Gribanova, O.S., Danilov, V.A., Kustanov, V.A., Sov. Phys. Solid State, 33, (1991), p. 1926.Google Scholar
[13] Boikov, Y.A., Gribanova, O.S., Danilov, V.A., Kustanov, V.A., Sov. Phys. Solid State, 32, (1990), p. 2056.Google Scholar
[14] Austin, I.G., Proc. Phys. Soc, 72, (1958), p.545.CrossRefGoogle Scholar
[15] Kaddouri, El, Charar, S., Benet, S., Maurice, T., Tedenac, J.C., Phys. Stat. Solidi, (1998°? to be published.)Google Scholar
[16] Rosi, F.D., Solid State Electron, 11, (1968), p. 833.CrossRefGoogle Scholar