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Growth of Epitaxial Inas Nanowires in a Simple Closed System
Published online by Cambridge University Press: 26 February 2011
Abstract
The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique.
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- Copyright © Materials Research Society 2006