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The Growth of Epitaxial NiSi2 Single Crystals on Silicon by the Use of Template Layers

Published online by Cambridge University Press:  15 February 2011

R. T. Tung ,
J. M. Gibson  and
J. M. Poate
R. T. Tung
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Gibson
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Poate
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
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Abstract

A novel crystal growth technique for NiSi2 epitaxy is presented which utilizes thin silicide (<60Å) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystalline NiSi2 films can be grown with either type A or type B orientations on Si(111). Continuous single crystalline NiSi2 is grown on Si(100) with flat interface and uniform thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 435
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

[1] Tu, K. N. and Mayer, J. W., in Thin Films-Interdiffusion and Reactions, edited by Poate, J. M., Tu, K. N., and Mayer, J. W., Wiley, New York, 1978.Google Scholar
[2] Tung, R. T., Bean, J. C., Gibson, J. M., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett. 40, 684 (1982).Google Scholar
[3] Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Japan. J. Appl. Phys., 20, 1649 (1981).CrossRefGoogle Scholar
[4] Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M., and Jacobson, D. C., Thin Solid Films, 93, 77 (1982).Google Scholar
[5] Bean, J. C. and Poate, J. M., Appl. Phys. Lett., 37, 643 (1980).Google Scholar
[6] Saitoh, S., Ishiwara, H., and Furukawa, S., Appl. Phys. Lett., 37, 203 (1980).Google Scholar
[7] Harrison, T. R., private communication, and Bean, J. C. private communication.Google Scholar
[8] Chiu, K. C. R., Poate, J. M., Rowe, J. E., Sheng, T. T., and Cullis, A. G., Appl. Phys. Lett. 38, 988 (1981).Google Scholar
[9] öll, H., Ho, P. S., and Tu, K. N., J. Appl. Phys., 52, 250 (1981).Google Scholar
[10] Tung, R. T., Gibson, J. M., and Poate, J. M., submitted to Phys. Rev. Lett..Google Scholar
[11] Gibson, J. M., Tung, R. T., and Poate, J. M., this volume.Google Scholar
[12] Baglin, J., d'Heurle, F., and Petersson, S., in Thin Film Interfaces and Interactions, edited by Baglin, J. E. E. and Poate, J. M., The Electrochemical Society, Princeton, 1980.Google Scholar
[13] Lau, S.S. and Cheung, N. W., Thin Solid Films, 71, 117 (1980).CrossRefGoogle Scholar