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Growth of GaN crystals under ammonothermal conditions

Published online by Cambridge University Press:  01 February 2011

Michael J. Callahan ,
Buguo Wang ,
Lionel O. Bouthillette ,
Sheng-Qi Wang ,
Joseph W. Kolis  and
David F. Bliss
Michael J. Callahan
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
Buguo Wang
Affiliation:
Department of Chemistry, Clemson University, SC 29634, USA
Lionel O. Bouthillette
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
Sheng-Qi Wang
Affiliation:
Solid State Scientific Corporation, 27–2 Wright Road, Hollis, NH 03049, USA
Joseph W. Kolis
Affiliation:
Department of Chemistry, Clemson University, SC 29634, USA
David F. Bliss
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
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Abstract

Growth of GaN bulk crystals under ammonothermal conditions has been developed. The experiments were performed in ammono-basic solutions in high nickel content autoclaves for up to 3 weeks. Nutrients were crystalline GaN made from vapor phase transport growth. Single crystal clusters of GaN on the order of 500 μm – 1 mm long were obtained. These crystals were spontaneously nucleated on the walls of the autoclave. Transport growth on polycrystalline GaN seeds and single crystal HVPE seeds was also achieved. GaN has a high solubility in ammono-basic solutions, on the order of several weight percent. The ammonothermal crystals were characterized by photoluminescence (PL), X-ray diffraction and SEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.10
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Gallium Nitride 2003 - Technology Status, Applications and Market Forecasts; Strategies Unlimited (market research report).Google Scholar
2. Kirchner, V., Ebel, R., Heinke, H., Einfeldt, S., Hommel, D., Selke, H, and Ryder, P.L., Mater. Sci. Eng. B59, 47 (1999).Google Scholar
3. Xu, X., Vaudo, R.P., Loria, C., Salant, A, Bramdes, G.R., and Chaudhuri, J., J. Cryst. Growth 246, 223–229 (2002).Google Scholar
4. Nam, O.H., Bremser, M. D., Zheleva, T. S., and Davis, R. F., Appl. Phys. Lett. 71, 2638 (1997).Google Scholar
5. Porowski, S. and Grzegory, I., in Properties of Group II Nitrides, INSPEC, The Institution of Electrical Engineers, edited by Edgar, J.H. (Stevenage, UK, 1994), p. 76.Google Scholar
6. Kuri, S., Abe, T., Naoi, Y., and Sakai, S. Jpn. J. Appl. Phys. 35 1637 (1996).Google Scholar
7. Porowski, S., J. Cryst. Growth 189/190, 153 (1998).Google Scholar
8. Aoki, M., Yamane, H., Shimada, M., Sarayma, S., and DiSalvo, F. J., J. Cryst. Growth 242, 70–76 (2002).Google Scholar
9. Dwiliński, R., Doradziński, R., Garczyński, J, Sierzputowski, L., Baranowski, J.M., and Kamińska, M., Diamond and Related Materials 7, 1348 (1998).Google Scholar
10. Kolis, J.W., Wilcenski, S, and Laudise, R.A., Mater. Res. Soc. Symp. Proc. 495, 367 (1998).Google Scholar
11. Dwiliński, R., Baranowski, J.M., and Kamińska, M., Acta physica polonica A 90, 763 (1996).Google Scholar
12. Suscavage, M., Harris, M., Bliss, D., Yip, P., Wang, S-Q, Schwall, D., Bouthilette, L., Bailey, J., Callahan, M., Look, D. C., Reynolds, D.C., Jones, R. L., Litton, C., MRS Internet J. Nitride Semicond. Res. 4S1, G3.40 (1999)Google Scholar