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Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

Published online by Cambridge University Press:  03 September 2012

M. H. Sohn ,
D. Kim ,
Y. O. Ahn  and
S. I. Kim
M. H. Sohn
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
D. Kim
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
Y. O. Ahn
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
S. I. Kim
Affiliation:
SKION Corporation, 612 River Street, Hoboken, NJ 07030
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Abstract

Polycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 375
Copyright
Copyright © Materials Research Society 1997

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