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Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111)

Published online by Cambridge University Press:  28 February 2011

R. T. Tung ,
F. Hellman ,
J. M. Gibson  and
T. Boone
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Hellman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. Boone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Single crystal type A and type B CoxNi1-xSi2 layers have been grown on Si(111) by deposition of Co-Ni alloy in UHV and annealing. The dependence of CoxNi1-xSi2 layer orientation on the thickness of deposited metal is similar to that observed for pure nickel reaction. Silicon deposition along with the Co-Ni alloy allows the growth of type B oriented CoxNi1-xSi2. Auger, LEED, RBS and TEM analyses suggest that the composition of the ternary silicide layers is inhomogeneous. The advantages and disadvantages of this material in device application will be briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 451
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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