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Heavily-Doped n+-GaAs with Low Compensation Grown by Atmospheric OMVPE

Published online by Cambridge University Press:  26 February 2011

R. Venkatasubramanian  and
S. K. Ghandhi
R. Venkatasubramanian
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180
S. K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Atmospheric OMVPE has been used, with SiH4 as the dopant, to grow n+-GaAs with free-carrier levels upto about 9e18 cm−3. Following a steady rise in carrier concentration with dopant pressure, the carrier concentration is seen to fall rapidly with further doping. Hall-effect and quantitative SIMS data have been used to obtain the distribution of silicon onto donor and acceptor sites. It is seen that there is negligible compensation upto free-carrier levels of about 5e18 cm−3. The mechanism of compensation throughout the doping range is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 67
Copyright
Copyright © Materials Research Society 1989

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References

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