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Heteroepitaxial Growth of MgO Films on NiO(100) Single Crystal Surfaces

Published online by Cambridge University Press:  15 February 2011

S. Imaduddin ,
A.M. Davidson  and
R.J. Lad
S. Imaduddin
Affiliation:
Laboratory for Surface Science and Technology, 5764 Sawyer Research Center, University of Maine, Orono, ME 04469-5764
A.M. Davidson
Affiliation:
Laboratory for Surface Science and Technology, 5764 Sawyer Research Center, University of Maine, Orono, ME 04469-5764
R.J. Lad
Affiliation:
Laboratory for Surface Science and Technology, 5764 Sawyer Research Center, University of Maine, Orono, ME 04469-5764
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Abstract

Epitaxial MgO layers were grown on cleaved NiO(100) single crystal surfaces. The less than 1% lattice mismatch between MgO and NiO allows almost ideal epitaxy of MgO at 100°C. The epitaxial films were created by dosing Mg onto stoichiometric NiO(100) both in ultra-high vacuum (UHV) and in an O2 atmosphere (5×10−7 Torr). Chemical interactions at the resulting interfaces were studied using XPS. When Mg is dosed onto NiO(100) in UHV, MgO forms by interacting with oxygen anions in the NiO substrate thereby reducing the nickel cations. Metallic Mg layers begin to form upon subsequent dosing. When Mg is deposited in O2, epitaxial MgO(100) layers grow to a thickness of at least 50Å as confirmed by in situ RHEED and LEED observations. Negligible intermixing between the MgO and NiO is observed during growth at 100°C and on subsequent annealing in UHV up to 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 177
Copyright
Copyright © Materials Research Society 1995

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