Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-12T21:18:36.914Z Has data issue: false hasContentIssue false
  • English
  • Français

HgCdTe– an Unexpectedly Good Choice for (Near) Room Temperature Focal Plane Arrays

Published online by Cambridge University Press:  10 February 2011

W. E. Tennant  and
C. Cabelli
W. E. Tennant
Affiliation:
Rockwell Science Center, LLC, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, wetennant@rsc.rockwell.com
C. Cabelli
Affiliation:
Rockwell Science Center, LLC, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, wetennant@rsc.rockwell.com
Get access

Abstract

Fueled by a broad range of government needs and funding, HgCdTe materials and device technology has matured significantly over the last two decades. Also in this same time period, we have come to understand better the phenomenology which limits imager performance. As a result of these developments, it appears that HgCdTe arrays may be tailored in wavelength to outperform GaAs-based image intensifier devices in sensitivity and to compete with bolometric and pyroelectric imaging arrays in NEDT at temperatures at or near room temperature (250K–295K). These benefits can be fully realized, however, only if HgCdTe can be brought to a level of maturity where the material and detectors made from it are limited by fundamental mechanisms. We will discuss the state of HgCdTe near room temperature performance and the practical and theoretical limits which constrain it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 221
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Mishri Vatsia, L., Stich, U. Karl, Dunlap, Douglas, Technical Report ECOM-7022, U. S. Army Electronics Command, Night Vision Laboratory, (Sep. 1972), obtained from Defense Technical Information Center (DTIC).Google Scholar
[2] Williams, G. M., and DeWames, R. E., J. Electron. Mat. 24, 1239 (1995)10.1007/BF02653080Google Scholar
[3] Piotrowski, J., and Gawron, W., Infrared Phys. & Tech. 38, 63 (1997)10.1016/S1350-4495(96)00030-8Google Scholar
[4] 4. Arias, J.M., “Growth of HgCdTe by molecular-beam epitaxy,” in Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareview Series No. 10, Inspec publication, edited by Capper, Peter, 30–35 (1994).Google Scholar
[5] Arias, J.M., Pasko, J.G., Zandian, M., Bajaj, J., Kozlowski, L.J., DeWames, R.E. and Tennant, W.E., Proceedings of SPIE Symposia on “Producibility of II–VI Materials and Devices”, Volume 2228, 1994.Google Scholar
[6] Bajaj, J., Arias, J.M., Zandian, M., Pasko, J.G., Kozlowski, L.J., DeWames, R.E. and Tennant, W.E., “Molecular Beam Epitaxial HgCdTe Materials Characteristics and Device Performance: Reproducibility Statistics,” J. Electronic Materials 24, 1067 (1995).Google Scholar
[7] Arias, J.M., Pasko, J.G., Zandian, M., Shin, S.H., Williams, G.M., Bubulac, L.O., DeWames, R.E., and Tennant, W.E., Appl. Phys. Lett. 62, 976 (1993).Google Scholar
[8] DeWames, R. E., Edwall, D. D., Zandian, M., Bubulac, L. O., Pasko, J. G., Tennant, W. E., Arias, J. M., D'Souza, a., Proceedings of the 1997 Workshop on the Physics and Chemistry of II–VI Materials, to be published.Google Scholar
[9][6] Edwall, D. D., DeWames, R. E., McLevige, W. V., Pasko, J. G., Arias, J. M., Proceedings of the 1997 Workshop on the Physics and Chemistry of II–VI Materials, to be published.Google Scholar
[10] Defense Advanced Research Projects Agency BAA 96–32.Google Scholar
[11] Motamedi, M. Edward, Tennant, William E., Sankur, Haluk O., Melendes, Robert, Gluck, Natalie S., Park, Sangtae, Arias, Jose M., Bajaj, Jagmohan, Pasko, John G., McLevige, William V., Zandian, Majid, Hall, Randolph L., Richardson, Patricia D., Opt. Eng. 36(5), 1374 (1997)Google Scholar
[12] Elliott, C. T., Gordon, N. T., Hall, R. S., Phillips, T. J., and White, A. M., J. Electron. Mat. 38, 1139 (1996)Google Scholar
[13] Humphries, R. G., Infrared Phys. 26, 337 (1986)Google Scholar
[14] Ashley, T., Elliott, C. T., Gordon, N. T., Phillips, T. J., and Hall, R. S., Infrared Phys. & Tech. 38, 145 (1997)Google Scholar