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HgCdTe(211)B Grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE
Published online by Cambridge University Press: 10 February 2011
Abstract
We present preliminary results on HgCdTe(211)B layers grown on CdTe(211)B/ZnTe(211)B/Si substrates by molecular beam epitaxy. As-grown layers show excellent n-type characteristics as measured by Hall effect. Hall mibilities higher than 1×10 cm2/v-s have been measured at 40K for Cd composition ∼24% with doping level ∼ 3×1015 cm−3. Obtained RHEED patterns during the growth shows very smooth surface morphology.
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- Copyright © Materials Research Society 1997
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