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HgTe-CdTe Superlattices Grown by Photo-MOCVD

Published online by Cambridge University Press:  25 February 2011

William L. Ahlgren ,
J. B. James ,
R. P. Ruth ,
E. A. Patten  and
J.-L. Staudenmann
William L. Ahlgren
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
J. B. James
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
R. P. Ruth
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
E. A. Patten
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
J.-L. Staudenmann
Affiliation:
Ames Laboratory and Department of Physics, Iowa State University, Ames, IA 50011
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Abstract

HgTe-CdTe superlattices have been grown, for the first time, by photoassisted MOCVD. The substrate temperature was 182°C. Superlattices were obtained despite low growth rates requiring long growth times (∼10 hours). Interdiffusion during growth may be slowed down by growing under saturated Hg vapor to minimize cation-vacancy formation. The nominal superlattice structures were 70Å HgTe-30Å CdTe, 40Å HgTe-40Å CdTe, and similar. Actual superlattice structures were verified by cross-sectional TEM and diffractometer x-ray diffraction patterns. The x-ray diffraction patterns showed satellite peaks up to third order. The actual structures had HgTe layers ∼20% thicker than the nominal (target) values. A grid-like array of dislocations at the substrate-epilayer interface, suggesting operation of a dislocation-blocking mechanism, was observed. Deficiencies in the superlattice growths include a low growth rate, nonuniform layers, high dislocation density (∼108 cm−2 in best layers), and high n-type carrier concentration (∼1018 cm−3 with mobilities up to 3.5 × 104 cm2 V−1 s−1 in the best layer) which may reflect the presence of donor impurities in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 405
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Beneking, H., Escobosa, A., and Krautle, H., J. Electron. Mater. 10, 473 (1981).CrossRefGoogle Scholar
Schmit, J.L. and Speerschneider, C.J., Infrared Physics 8, 247 (1968).Google Scholar
3. Chen, J.-S., Defect Studies on Crystalline Solids, PhD thesis, University of Southern California, 1985.Google Scholar
4. Mullin, J.B. and Irvine, S.J.C., J. Vac. Sci. Tech. 21, 178 (1982).Google Scholar
5. Irvine, S.J.C. and Mullin, J.B., J. Cryst. Growth 55, 107 (1981).Google Scholar
6. Ahlgren, W.L., Himoto, R.H., Sen, S., and Ruth, R.P., Proc. Mater. IRIS, 1986.Google Scholar
7. Hoke, W.E. and Lemonias, P.J., Appl. Phys. Lett. 46, 398 (1985).Google Scholar
8. Staudenmann, J.-L., Sandholm, M., Chapman, L.D., and Liedl, G.L., Nuc. Instr. Meth. Phys. Res. 222, 177 (1984).Google Scholar
9. Knox, R.D., Staudenmann, J.-L., Monfroy, G., and Faurie, J.-P., Acta Cryst. A, submitted for publication, Oct. 1986.Google Scholar
10. Matthews, J.W., Blakeslee, A.E., and Mader, S., Thin Solid Films 33, 253 (1976).Google Scholar
11. Mader, S.R. and Matthews, J.W., U.S. Patent No. 3,788,890 (29 January 1974).Google Scholar
12. James, T.W. and Stoller, R.E., Appl. Phys. Lett. 44, 56 (1984).Google Scholar
13. Olsen, G.H., Abrahams, M.S., Buiocchi, C.J., and Zamerowski, T.J., J. Appl. Phys. 46, 1643 (1975).Google Scholar
14. Galazka, R.R., Phys. Lett. 32A, 101 (1970).Google Scholar
15. Okazaki, T. and Shogenji, K., J. Phys. Chem. Solids 36, 439 (1975).CrossRefGoogle Scholar
16. Dingle, R., Stürmer, H.L., Gossard, A.C., and Wiegmann, W., Appl. Phys. Lett. 33, 665 (1978).Google Scholar
17. Calculated using code provided by Schulman, J.N., Hughes Research Laboratories.Google Scholar
18. Hansen, G.L., Schmit, J.L., and Casselman, T.N., J. Appl. Phys. 53, 7099 (1982).CrossRefGoogle Scholar
19. Staudenmann, J.-L., Horning, R.D., Knox, R.D., Faurie, J.-P., Reno, J., Sou, I.K., and Arch, D.K., Trans. Met. AIME, 1986. In press.Google Scholar