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High Density Direct Bond Interconnect (DBI) Technology for Three Dimensional Integrated Circuit Applications

Published online by Cambridge University Press:  26 February 2011

Paul Enquist
Paul Enquist*
Affiliation:
p.enquist@ziptronix.com, Ziptronix, Inc., R&D, 800 Perimeter Park, Suite B, Morrisville, NC, 27560, United States, (919) 459-2456
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Abstract

A novel direct wafer bonding technology capable of forming a very high density of electrical interconnections across the bond interface integral to the bond process is described. Results presented include an 8 um interconnection pitch, die-to-wafer and wafer-to-wafer bonding formats, temperature cycling reliability × 10 greater than the JEDEC requirement, connection yield ∼ 99.999, > 50% part yield on parts with ∼ 450,000 connections, and < 0.1 Ohm connection resistance at 1pA without requiring a voltage surge to induce current.

Keywords

bondingCMPsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 970: Symposium Y – Enabling Technologies for 3-D Integration , 2006 , 0970-Y01-04
Copyright
Copyright © Materials Research Society 2007

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