Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-01T18:25:10.669Z Has data issue: false hasContentIssue false
  • English
  • Français

High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

Published online by Cambridge University Press:  01 February 2011

Jean-Yves DUBOZ ,
Jean-Luc Reverchon ,
Mauro Mosca ,
Nicolas Grandjean  and
Franck Omnes
Jean-Yves DUBOZ
Affiliation:
CRHEA-CNRS, Valbonne, France
Jean-Luc Reverchon
Affiliation:
Device Department, Thales TRT, Orsay, France
Mauro Mosca
Affiliation:
Device Department, Thales TRT, Orsay, France
Nicolas Grandjean
Affiliation:
CRHEA-CNRS, Valbonne, France
Franck Omnes
Affiliation:
CRHEA-CNRS, Valbonne, France
Get access

Abstract

Solar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y1.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] «Group III nitride semiconductor compounds: Physics and Applications“, edited by Gil, B., Oxford University Press, 1998.Google Scholar
[2] ICNS3 conference in Montpellier, July 5–9 1999, Physica Status Solidi (b), part A vol. 176 (see pages 141–169 for detectors) and part B vol 216, edited by A. Hoffmann and P. Lefebvre.Google Scholar
[3] ICNS4 conference in Denver, July 5–9 1999, Physica Status Solidi (a) vol. 188 issues 1, edited by F. Ponce (see pages 283, 289, 293, 297, 333 for detectors)Google Scholar
[4] Collins, C.J., Chowdhurry, U., Wong, M.M., Yang, B., Beck, A.L., Dupuis, R.D., and Campbell, J.C., Appl. Phys. Lett. 80, 3754 (2002).Google Scholar
[5] Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
[6] Duboz, J.Y., Binet, F., Dolfi, D., Laurent, N., Scholz, F., Off, J., Sohmer, A., Briot, O., Gil, B., Material Science and Engineering B, Vol 50, 289–295 (1997).Google Scholar
[7] Natali, F., Byrne, D., Dussaigne, A., Grandjean, N., Massies, J., Damilano, B., Appl. Phys. Lett. 82, 499 (2003).Google Scholar
[8] Wagener, M.C., James, G.R., Omnes, F., Appl. Phys. Lett., to be published.Google Scholar