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High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

Published online by Cambridge University Press:  01 February 2011

A.S. Borovik ,
C. Xu ,
B. C. Hendrix ,
J. F. Roeder  and
T. H. Baum
A.S. Borovik
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
C. Xu
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
B. C. Hendrix
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
J. F. Roeder
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
T. H. Baum
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
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Abstract

High purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B2.11
Copyright
Copyright © Materials Research Society 2002

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References

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