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High Quality GaP Growth on Si Substrates By Mocvd

Published online by Cambridge University Press:  28 February 2011

K. Uchida ,
Y. Kohama ,
M. Tajima ,
T. Soga ,
T. Jimbo  and
M. Umeno
K. Uchida
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
Y. Kohama
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
M. Tajima
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso—cho, Showa—ku, Nagoya 466, Japan
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Abstract

GaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 319
Copyright
Copyright © Materials Research Society 1988

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References

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