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High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

Published online by Cambridge University Press:  17 March 2011

Riyaz Rashid ,
A. J. Flewitt ,
D. Grambole ,
U. Kreiβig ,
J. Robertson  and
W. I. Milne
A. J. Flewitt
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
D. Grambole
Affiliation:
Institute for Ion Beam Physics and Materials Science Rossendorf Research Centre, Dresden, Germany
U. Kreiβig
Affiliation:
Institute for Ion Beam Physics and Materials Science Rossendorf Research Centre, Dresden, Germany
J. Robertson
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
W. I. Milne
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
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Abstract

Silicon dioxide (SiO2) films have been deposited at 80°C in an Electron Cyclotron Resonance (ECR) plasma reactor from a gas phase combination of He, O2 and SiH4. The ECR configuration provides a highly ionised plasma (∼1016 m−3) with low ion energies (∼10eV) that gives efficient dehydrogenation of the growing material whilst minimizing defect creation. The physical characterisation of the material gives a refractive index of 1.46, an etch rate in buffered HF below 3 nm/s and a hydrogen content of less than 2 at.%. Electrical tests reveal a resistivity in excess of 1014Ωcm, an average breakdown strength of 5 MV/cm, and fixed charge and interface state densities of 1011 cm−2 and 1012 eV−1cm−2 respectively. This has been achieved using a O2:SiH4 flow ratio ≍ 2:1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D13.1.1
Copyright
Copyright © Materials Research Society 2001

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References

[1] Gosain, D. P., Noguchi, T., Usui, S., Jpn. J. Appl. Phys. Pt. II, 39, 179, (2000)Google Scholar
[2] Batey, J., Tierney, E., J. Appl. Phys. 60, 3136, (1986)Google Scholar
[3] Sandoe, J.N., SID Digest, 20.1, (1998)Google Scholar
[4] Andosca, R.G., Varhue, W.J., Adams, E., J. Appl. Phys. Pt. II,. 72, 1126, (1992)Google Scholar
[5] Matsuo, S., Kiuchi, M., Jpn. J. Appl. Phys. 22, , L210, (1983)Google Scholar
[6] Herak, T. V., Chau, T.T., Thomson, D. J., Meija, S. R., Buchanan, D. A., Chao, K. C., J. Appl. Phys, 65, 2457, (1989)Google Scholar
[7] Lucovsky, G., Mantini, M.J., Srivastana, J.K., Irene, E.A., J. Vac. Sci. Technol. B, 5, 530, (1987)Google Scholar
[8] Pai, P.G., Chao, S.S., Takagi, Y., Lucovsky, G., J. Vac. Sci. Technol. A, 4, 689, (1986)Google Scholar
[9] Yuda, K., Tanabe, H., Sera, K., Okumura, F., MRS Symp. Proc., 508, 167, (1998)Google Scholar
[10] Young, N. D., Gill, A., Semicond. Sci. Tech., 7, 1103, (1992)Google Scholar
[11] Jiang, N., Hugon, M., Agius, B., Olivier, J., Puech, M., J. Appl. Phys. 76, 1847, (1994)Google Scholar