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A High Resolution Cathodoluminescence (LC-CL) Study on GaAs-AIGaAs Interface

Published online by Cambridge University Press:  28 February 2011

K. Wada ,
A. Kozen  and
N. Inoue
K. Wada
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
A. Kozen
Affiliation:
NTT Optoelectronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
N. Inoue
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
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Abstract

High resolution cathodoluminescence microscopy (CL) under a magnetic field is proposed and used to study the interface structure of GaAs-AlGaAs single quantum wells. This principle called, Lorentz-force Carrier-confinement (LC), successfully improves the resolution by up to a few thousand Angstrom. Periodic light and dark stripe patterns are observed in LC-CL monochromatic images of the single quantum wells on the intentionally-tilted substrates. It is shown that the stripes represent stair-like stepped interfaces and that the observed terraces are extended and the steps are clustered. Based on the results, a new interface structure model is proposed, that takes the tilting into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 437
Copyright
Copyright © Materials Research Society 1989

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References

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