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High Resolution Transmission Electron Microscopy Study of Se+ Implanted and Annealed GaAs

Published online by Cambridge University Press:  25 February 2011

D.K. Sadana ,
T. Sands  and
J. Washburn
D.K. Sadana
Affiliation:
Materials and Molecular Research Divisions, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720; Now at Microelectronics Center of North Carolina, Research Triangle Park, NC 27709.
T. Sands
Affiliation:
Materials and Molecular Research Divisions, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720;
J. Washburn
Affiliation:
Materials and Molecular Research Divisions, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720;
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Abstract

High resolution transmission electron microscopy (HRTEM) has been applied to the study of amorphization and recrystallization mechanisms in Se+ implanted (100) GaAs. An Se+ dose of 1 × 1014 cm−2 at 450 keV (projected range 1550Å) produced an amorphous band in the depth range 250 to 2150Å below the surface. Annealing at 400°C resulted in the epitaxial regrowth of the upper and lower transition region (0–250Å and 2150 – 2500Å, respectively). Regrowth of the amorphous layer was found to proceed by the nucleation and propagation of the dense network of stacking faults bundles. These bundles disappeared on higher ≥600°C) temperature annealing. Amorphization and recrystallization mechanisms in Se+ implanted GaAs are discussed in light of these HRTEM results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 311
Copyright
Copyright © Materials Research Society 1984

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References

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