Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-11T09:30:48.324Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

Published online by Cambridge University Press:  10 February 2011

J. Chaudhuri ,
M. Hooe Ng ,
D. D. Koleske ,
A. E. Wickenden  and
R. L. Henry
J. Chaudhuri
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133
M. Hooe Ng
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133
D. D. Koleske
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
R. L. Henry
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
Get access

Abstract

High resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 315
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Mukai, T., and Senoh, M., I. Appl. Phys. 76, 8189 (1994).Google Scholar
2. Davis, R. F., Physics B185, 1(1993).Google Scholar
3. Mohammad, S. N., Salvador, A. A., Markoc, H., Proc. of IEEE 83, 1306 (1995).Google Scholar
4. Amano, H., Sawaki, N., Akasaki, L., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
5. A Wickanden, E., Rowland, L. B., Doverspike, K., Gaskill, D. K., Freitas, J. A. Jr., Simons, D. S., and Chi, P. H., J. Electron. Mater. 24, 1547(1995).Google Scholar
6. Chaudhuri, J., Thokala, R., Edgar, J. H. and Sywe, B. S., Thin Solid Films 274, 23 (1996).Google Scholar
7. Rowland, L. B., Doverspike, K., Giordana, A., Fatemi, M., Gaskill, D. K., Showronski, M. and Freitas, J. A. Jr., in Silicon Carbide and Related Materials, eds. Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. A., Kaplan, R. and Rahman, M. (Institute of Physics, Bristol, 1994), p 429.Google Scholar
8. International Tables for Crystallography, Edited by Ibers, J. and Hamilton, W. C. (Kynoch, Birmingham, 1974) Vol. IV.Google Scholar
9. Horton, M. J. and Averbach, B. L., Acta Metall. Vol.9, 237 (1961).Google Scholar
10. Paine, B. M., MRS Symp. Proc. 69, 39 (1986) 11. J. E. Ayers, J. Crystal Growth 135, 71 (1994).Google Scholar
11. Chaudhuri, J., Ng, M. Hooe, Koleske, D. D., Wickenden, A. E., and Henry, R. L., to be submitted to J. Electr. Mat.Google Scholar
12. Heying, B., Wu, X. H., Keller, S., et. al. Appl. Phys. Lett. 68, 643 (1996).Google Scholar
13. Pelzman, A., Mayer, M., Kirchner, C., et. al., Int. L. Nitride Semiconductor Res.Vol.1, Art. 40.Google Scholar