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High Temperature Reproducible Preparation of Mg2Si Films on (001)Al2O3 substrates Using RF Magnetron Sputtering Method

Published online by Cambridge University Press:  16 May 2014

Atsuo Katagiri ,
Shota Ogawa ,
Takao Shimizu ,
Masaaki Matsushima ,
Kensuke Akiyama  and
Hiroshi Funakubo
Atsuo Katagiri
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Shota Ogawa
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Takao Shimizu
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Masaaki Matsushima
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Kensuke Akiyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Abstract

A RF magnetron sputtering method was used to prepare Mg2Si films at 300-400oC on (001) Al2O3 substrates from a Mg disc target with Si chips. Mg deposition was not detected at 400°C from a pure Mg disc target without Si chips due to the high vapor pressure of Mg. However, the amount of Mg deposition increased with the increase in Si/(Mg+Si) area ratio of the target surface together with the increase of the Si deposition. The obtained films had a stoichiometric composition of Si/(Mg+Si)=0.33 that consisted of the well crystalline Mg2Si single phase regardless of Si/(Mg+Si) area ratio of the target surface. This showed the existence of a “process window” against supply ratio of Si/(Mg+Si) for Mg2Si single phase films with a stoichiometric composition. This is considered to be due to the vaporization of the excess Mg prepared under the Mg excess condition as reported by Mahan et al. for Mg2Si films prepared at 200°C by ultra-high vacuum evaporation.

Keywords

thermoelectricsputteringfilm
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1642: Symposium BB – Thermoelectric Materials—From Basic Science to Applications , 2014 , mrsf13-1642-bb07-04
Copyright
Copyright © Materials Research Society 2014 

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References

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