Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-20T08:46:08.007Z Has data issue: false hasContentIssue false
  • English
  • Français

High Temperature Silicide Thin-Film Thermocouples

Published online by Cambridge University Press:  25 February 2011

Kenneth G. Kreider
Kenneth G. Kreider*
Affiliation:
National Institute of Standards and Technology, Chemical Science and Technical Laboratory, Gaithersburg, MD 20899
Get access

Abstract

High-temperature silicides have been used in mechanical structures, heating elements, and electronic, CMOS applications. Their stability in high temperature oxidizing environments and excellent electrical conductivity may also make them useful as high temperature thin-film sensors in harsh environments. We have investigated sputter deposited MoSi2, ReSi2, TaSi2, TiSi2, and WSi2 thin films and characterized their performance as thermoelements and stability up to 1200 °C. A multilayer technique was developed to ensure constant silicide stoichiometry during oxidation thereby maintaining a constant Seebeck coefficient. In addition techniques were developed to suppress the formation of metal oxides from the silicides. The results indicated excellent stability of Seebeck coefficient up to 1200 °C. These results are compared with the problems of thin film instability in the Seebeck coefficient found in noble metal thermocouples. Potential applications for temperature and heat transfer measurements will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 285
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Burgess, D., Yust, M. and Kreider, K. G., Sensors and Actuators A 24, 155–161 (1990).Google Scholar
2. Dils, R. R. and Follansbee, P. S., “Superalloys: Metallurgy and Manufacture”, ed. Kear, B.H., Muzyka, D.R. and Wlodek, S. T., Claitor, Baton Rouge, 37, (1976).Google Scholar
3. Morrell, T., Wahiduzzaman, S., Fort, E. F., Tree, D.R., DeWitt, D.P. and Kreider, K.G.. Congress of Society of Automotive Engineers Tech. Paper, Detroit, MI, Feb. 25, 1989.Google Scholar
4. Kreider, K. G., J. Vac. Sci and Tech., A 11(4), Jul/Aug 1993.Google Scholar
5. Hollanda, R. in Temperature: Its Measurement and Control in Science and Industry, p. 649 American Institute of Physics, New York, NY, 1992, Vol 1. 1645.Google Scholar
6. Bennethum, W.H. and Sherwood, L.T. “Sensors for Ceramic Components in Advanced Propulsion Systems” NASA Contractor Report 180900 NASA, Lewis Research Center, Cleveland, OH Aug. 1988.Google Scholar
7. Murarka, S. P. “Silicides for VLSI Applications” Academic Press, New York 1983.Google Scholar
8. Deal, B. E. and Grove, A. S., J. Appl. Phys., 36, 3770 (1965).Google Scholar
9. Chen, J.R., Houng, M. P., Hsiung, S. K. and Liu, Y. C., Appl. Phys. Ltr., 37, 824 (1980).Google Scholar
10. Chen, J. R., Liu, Y. C., and Chu, S. D., J. Electron. Mater, 11, 355 (1982).Google Scholar
11. Bartur, M. and Nicolet, M-A., Appl. Phys. A, 29, 69 (1982).Google Scholar
12. Bartur, M. and Nicolet, M-A., Appl. Phys. Ltr., 40, 175 (1982).Google Scholar
13. Mochizuki, T. and Kashiwagi, M., J. Electrochem. Soc. 127, 1128 (1980).Google Scholar
14. Gaglin, J. E. E., d'heurle, F. M., and Peterson, C. S., J. Appl. Phys., 54, 1849 (1983).Google Scholar
15. Murarka, S.P., Fraser, D.B., Lindenberger, W.S. & Sionha, A.K., J. Appl. Phys., 512, 3241 (1980).Google Scholar
16. Razouk, R. R., Thomas, M. E., and Pressacco, S. L., J. Appl. Phys., 53, 5342 (1982).Google Scholar
17. Mohammadi, F., Saraswat, K. C., and Meindl, J. D., Appl. Phys. Letter, 35, 529 (1979).CrossRefGoogle Scholar
18. d'Heurle, F., Irene, E. A., and Ting, C. Y., J. Appl. Phys., 54, 2716 (1983).Google Scholar
19. Strydom, W. J. and Lemband, J. C., Thin Solid Films, 131, 215–231 (1985).Google Scholar