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Highly Oriented Very Low Surface Resistance Tl2Ba2Cu2O8 Films on NdGaO3 and LaAlO3

Published online by Cambridge University Press:  26 February 2011

William L. Holstein
Affiliation:
Du Pont Central Research and Development, P. O. Box 80304, Wilmington, DE 19808–0304
Louis A. Parisi
Affiliation:
Du Pont Central Research and Development, P. O. Box 80304, Wilmington, DE 19808–0304
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Abstract

Low surface resistance epitaxial Tl2CaCu2O8 thin films were prepared on orthorhombic (001) NdGaO3 and pseudocubic (100) LaAlO3. The films were c-axis oriented on both substrates, with [100] Yl2Ba2CaCu2O8 parallel to [110] NdGaO3 or pseudocubic [100] LaAlO3. The orientation was particularly good on NdGaO3, where the rocking curve full width at half maximum was 0.19°. Films on LaAlO3 exhibit high Tc and exceptional microwave properties: inductive superconducting Tc of 106 ± 2 K, onset of flux exclusion at 107.6 ± 0.5 K, and 10 GHz surface resistance of 130 ± 20 μΩ at 77 K. These results represent the highest reported Tc of any Tl2Ba2CaCu2O8 films and the lowest surface resistance at 77 K of any films of any phase on any substrate reported to date. On NdGaO3, in spite of a substrate-film reaction, films with high Tc and good microwave properties were also produced: inductive Tc of 105 ± 2 K, onset of flux exclusion at 104.0 ± 0.5 K, and 10 GHz surface resistance at 77 K of 600 ± 100 μΩ.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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