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Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

Published online by Cambridge University Press:  28 July 2011

Kazuaki Nakajima ,
Hiroshi Nakazawa ,
Katsuyuki Sekine ,
Kouji Matsuo ,
Tomohiro Saito ,
Tomio Katata ,
Kyoichi Suguro  and
Yoshitaka Tsunashima
Kazuaki Nakajima
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577 e-mail: kazuaki2.nakajima@toshiba.co.jp
Hiroshi Nakazawa
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Katsuyuki Sekine
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Kouji Matsuo
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Tomohiro Saito
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Tomio Katata
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Kyoichi Suguro
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Yoshitaka Tsunashima
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
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Abstract

In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D4.2
Copyright
Copyright © Materials Research Society 2004

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References

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