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High-Precision Characterization of III-Nitride Semiconductor Alloys with Secondary Ion Mass Spectrometry (SIMS)

Published online by Cambridge University Press:  21 February 2011

J W. Erickson ,
Y. Gao  and
R. G. Wilson
J W. Erickson
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Y. Gao
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
R. G. Wilson
Affiliation:
Hughes Research Lab., 3011 Malibu Canyon Rd., Bldg. 250, M/S RL61, Malibu, CA 90268
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Abstract

Samples of representative AlxGayIn1−x-yN compositions have been studied with secondary ion mass spectrometry (SIMS). First, ionized species of common interest (H, B, C, O, Mg, Si, and Cd) were implanted into the Ill-nitride samples to provide calibrated standards. Depth profiles and conversion factors for quantification of dopants were then obtained using O2+ or Cs+bombardment and positive or negative SIMS to measure B+ and Mg+; H−, B−, C−, O−, and Si−; and CdCs+. In addition calibration curves for quantification of stoichiometry were prepared using MCs+ ions (NCs+, AlCs−, GaCs+, InCs+) for which the ion yields are relatively independent of the matrix composition; and using atomic, dimer, and trimer ions (Al, Ga, In, Al2, Ga2, In2, Al3, Ga3) which are very sensitive to matrix composition. The empirical calibration curves show small non-linearities. Dopant concentrations can be quantified with great sensitivity (detection limits usually below 1 ppm), accuracy (usually better than 10%), and precision (better than 25%). Matrix stoichiometry can be quantified with an accuracy of about 1–3%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 363
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Novak, S. W. and Wilson, R. G., in SIMS VI Proceeedings, edited by Benninghoven, A. et al. , John Wiley & Sons, New York, 1988, p. 303.Google Scholar
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