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High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001)

Published online by Cambridge University Press:  10 February 2011

H. Siegle ,
Y. Kim ,
G. S. Sudhir ,
J. Kruger ,
P. Perlin ,
J. W. Ager ,
C. Kislelowski  and
E. R. Weber
H. Siegle
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Y. Kim
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
G. S. Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
J. Kruger
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
P. Perlin
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
J. W. Ager
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
C. Kislelowski
Affiliation:
Lawrence Berkeley National Laboratory, National Center for Electron Microscopy, Berkeley, California 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720
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Abstract

We report on growth of GaN on Germanium as an alternative substrate material. The GaN films were deposited on Ge(001) substrates by plasma-assisted molecular beam epitaxy. Atomic force microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy were used to characterize the structural and optical properties of the films. We observed that the Ga/N ratio plays a crucial role in determining the phase purity and crystal quality. Under N-rich conditions the films were phase-mixed, containing cubic and hexagonal GaN, while in the Ga-rich regime they were purily hexagonal. The latter samples show bandedge luminescence with linewidths as small as 31 meV at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 451
Copyright
Copyright © Materials Research Society 1999

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References

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