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A High-Speed Amorphous-Silicon Dytamic Circuit
Published online by Cambridge University Press: 28 February 2011
Abstract
A novel dynamic circuit composed of amorphous-silicon Schottkybarrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1µm-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Preliminary experimental results are also presented.
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- Copyright © Materials Research Society 1985
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