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High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

Published online by Cambridge University Press:  01 February 2011

Tsuyoshi Sekitani ,
Shingo Iba ,
Yusaku Kato ,
Yoshiaki Noguchi ,
Takao Someya  and
Takayasu Sakurai
Tsuyoshi Sekitani
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Shingo Iba
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Yusaku Kato
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Yoshiaki Noguchi
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Takao Someya
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Takayasu Sakurai
Affiliation:
Center for Collaborative Research, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Abstract

We have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I1.9
Copyright
Copyright © Materials Research Society 2006

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References

1 Rogers, J. A., Bao, Z., Baldwin, K., Dodabalapur, A., Crone, B., Raju, V. R., Kuck, V., Katz, H., Amundson, K., Ewing, J., and Drzaic, P., Proc. Natl. Acad. Sci. U.S.A. 98, 4835 (2001).Google Scholar
2 Sheraw, C. D., Zhou, L., Huang, J. R., Gundlach, D. J., Jackson, T. N., Kane, M. G., Hill, I. G., Hammond, M. S., Campi, J., Greening, B. K., Francl, J., and West, J., Appl. Phys. Lett. 80, 1088 (2002).Google Scholar
3 Baude, P. F., Ender, D. A., Haase, M. A., Kelley, T. W., Muyres, D. V., and Theiss, S. D., Appl. Phys. Lett. 82, 3964 (2003).Google Scholar
4 Drury, C. J., Mutsaers, C. M. J., Hart, C. M., Matters, M., and Leeuw, D. M. de, Appl. Phys. Lett. 73, 108–110 (1998).Google Scholar
5 Someya, T., Sekitani, T., Iba, S., Kato, Y., Kawaguchi, H., and Sakurai, T., Proc. Natl. Acad. Sci. U.S.A. 101, 9966 (2004).Google Scholar
6 Kawaguchi, H., Someya, T., Sekitani, T., and Sakurai, T., IEEE J. Solid-State Circuits. 40, 177 (2005).Google Scholar
7 Kang, S. J., Noh, M., Park, D. S., Kim, H. J., Whang, C. N., C. –H. Chang, J. Appl. Phys. 95, 2293 (2004).Google Scholar
8 Kato, Y., Iba, S., Teramoto, R., Sekitani, T., Someya, T.. Kawaguchi, H., and Sakurai, T., Appl. Phys. Lett. 84, 3789 (2004).Google Scholar
9 Sekitani, T., Kato, Y., Iba, S., Shinaoka, H., Someya, T., Sakurai, T., and Takagi, S., Appl. Phys. Lett. 86, 073511 (2005).Google Scholar
10 Sekitani, T., Iba, S., Kato, Y., and Someya, T., Appl. Phys. Lett. 85, 3902 (2004).Google Scholar