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High-Temperature Reorientation Of Distortions In The Excited State Of The VGaTeAs Complexes In n-Type GaAs

Published online by Cambridge University Press:  15 February 2011

A. A. Gutkin ,
M. A. Reshchikov  and
V. E. Sedov
A. A. Gutkin
Affiliation:
Loffe Physical-Technical Institute, 26 Polytechnicheskaya, St.-Petersburg 194021, Russia, agut@defect.ioffe.rssi.ru
M. A. Reshchikov
Affiliation:
Loffe Physical-Technical Institute, 26 Polytechnicheskaya, St.-Petersburg 194021, Russia, agut@defect.ioffe.rssi.ru
V. E. Sedov
Affiliation:
Loffe Physical-Technical Institute, 26 Polytechnicheskaya, St.-Petersburg 194021, Russia, agut@defect.ioffe.rssi.ru
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Abstract

We have investigated polarization of photoluminescence from the VGaTeAs complexes in n-GaAs induced through resonant excitation by polarized light. Experimental data in temperature range from 77 to 240 K were described by classic one-dipole approximation within the model of the VGaTeAs complex subjected to the Jahn-Teller distortion in the ground and excited states. It is shown that depolarization of photoluminescence at temperatures over ∼ 120 K may be explained by concurrent action of i) thermal emission and back capture of holes bound to the complexes in the excited state and ii) reorientation of complex distortion during a life of this state. The model parameters have been estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 497
Copyright
Copyright © Materials Research Society 1997

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