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Hot-wire CVD a-Si:H TFT on Plastic Substrates

Published online by Cambridge University Press:  01 February 2011

Farhad Taghibakhsh  and
K.S. Karim
Farhad Taghibakhsh
Affiliation:
ftaghiba@sfu.ca, Simon Fraser University, Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada, 778 895 6446
K.S. Karim
Affiliation:
kkarim@sfu.ca, Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
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Abstract

Fabrication of hot-wire chemical vapor deposition (HWCVD) of amorphous silicon (a-Si) thin film transistors (TFT) on thin polyamide sheets is reported. A single graphite filament at 1500 °C was used for HWCVD and device quality amorphous silicon films were deposited with no thermal damage to plastic substrate. Top-gate staggered thin film transistors (TFTs) were fabricated at 150°C using hot-wire deposited a-Si channel, Plasma enhanced chemical vapor deposition (PECVD) silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Low leakage current of 5×10-13 A, high switching current ratio of 1.3×107, and small sub threshold swing of 0.3 V/dec was obtained for TFTs with aspect ratio of 1300μm/100μm. The field effect mobility was extracted to be 0.34 cm2/V.s.

Keywords

chemical vapor deposition (CVD) (deposition)Sipolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A18-02
Copyright
Copyright © Materials Research Society 2006

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References

references

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