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H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

Published online by Cambridge University Press:  10 February 2011

V. Atluri  and
N. Herbots
V. Atluri
Affiliation:
Intel Corporation, Chandler, AZ.
N. Herbots
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ.
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Abstract

Si(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.

Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 399
Copyright
Copyright © Materials Research Society 1998

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