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Hrem In Situ Annealing of the CdTe/GaAs Heterojunction

Published online by Cambridge University Press:  21 February 2011

Alan Schwartzman  and
Robert Sinclair
Alan Schwartzman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

This paper describes the application of high-resolution electron microscopy (HREM) to the determination of phase diagrams. Using a heating holder in a high-resolution transmission electron microscope (TEM), the chemical stability of a CdTe/GaAs interface is confirmed, as predicted by the Ga-As-Cd-Te quaternary phase diagram. Crisp, near-atomic-resolution video imaging is obtained at an annealing temperature of 500°C. Not only are the above results in complete agreement with ex situ annealing of the CdTe/GaAs heterojunction, but also direct observations of dynamic events occuring at the atomic level are recorded in real-time. Sublimation at the edge of a CdTe {111} thin film occurs via a ledge mechanism. Instead of a steady progression of this solid-vapor reaction, one obtains a real-time impression of dynamic equilibrium between vaporization and recondensation as atoms from the surface disappear and reappear several times before their ultimate removal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 205
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Panish, M. B., J. Electrochem. Soc. 114, 91 (1967).Google Scholar
2. Woolley, J. C. and Smith, B. A., Proc. Phys. Soc. (London) 72, 867 (1958).Google Scholar
3. Bravman, J. C. and Sinclair, R., J. Electron Microsc. Technique 1.,53 (1984).Google Scholar
4. Bean, R. C. et al., J. Vac. Sci. Technol. A 4, 2153 (1986).Google Scholar
5. Petruzzello, J. et al., Appl. Phys. Lett. 50, 1423 (1987).Google Scholar
6. Maeda, K. et al., J. Appl. Phys. 56, 554 (1984).Google Scholar
7. Sinclair, R. et al., Nature 298, 127 (1982).Google Scholar