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Hrem Study of Heteroeprtaxial Interfaces in the TiO2/Al2O3 System

Published online by Cambridge University Press:  25 February 2011

Y. Gao ,
K. L. Merkle ,
H. L. M. Chang ,
T. J. Zhang  and
D. J. Lam
Y. Gao
Affiliation:
Materials Science Division, Argonne National Laboratory Argonne, IL 60439
K. L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory Argonne, IL 60439
H. L. M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory Argonne, IL 60439
T. J. Zhang
Affiliation:
Materials Science Division, Argonne National Laboratory Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory Argonne, IL 60439
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Abstract

TiO2 thin films were grown epitaxially on (1120) sapphire (α-Al2O3) at 800 °C by the MOCVD method. The TiO2 films and TiO2/Al2O3 interfaces were characterized by TEM and HREM. The observations indicate that the TiO2 films are single crystalline and have the rutile structure. A majority of the films has the epitaxial orientation relationship between the TiO2 rutile films (R) and the α-Al2O3 substrates (S): (101)[010]R||(1120)[0001]S, while the epitaxial relationship of (100)[010]R||(1120)[0001]s has also been observed for one film. HREM studies show that the (100) film was grown on an off-cut substrate, vicinal to (1120). Detailed atomic structures of the interfaces will be presented and discussed in terms of the growth mechanism and misfit dislocation structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 59
Copyright
Copyright © Materials Research Society 1991

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References

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