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Hydrogen Configurations in Microcrystallized Sputtered Amorphous Silicon.

Published online by Cambridge University Press:  28 February 2011

L. Lusson
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
P. Elkaim
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
M. Cuniot
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
D. Ballutaud
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
R. Rizk
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
J. Dixmier
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place Aristide Briand, 92195 Meudon Cedex, (France).
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Abstract

Successive deuterium diffusion and effusion experiments are performed on undoped microcrystalline silicon obtained from thermally crystallized sputtered amorphous silicon thin films. The effect of prior incorporation of deuterium during the amorphous film growth on the crystallization mechanism and on the microcrystalline film quality is probed by the use of the post hydrogenation procedure. In connection with the deuterium solubility as provided by secondary ion mass spectroscopy (SIMS) profiling, the analysis of the effusion spectra suggests the existence of large cavities in the crystallized a-Si:D films, containing most probably molecular hydrogen. They are absent in the corresponding crystallized non-deuterated a-Si films. Other deuterium configurations seem to be present in both kinds of samples such as weakly bonded deuterium in small clusters and at grain boundaries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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