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Hydrogen Injection Into P-Type Silicon By Chemical Etching

Published online by Cambridge University Press:  26 February 2011

A. J. Tavendale ,
A. A. Williams  and
S. J. Pearton
A. J. Tavendale
Affiliation:
Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories, Private Mail Bag 1, Menai, NSW, 2234, Australia
A. A. Williams
Affiliation:
Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories, Private Mail Bag 1, Menai, NSW, 2234, Australia
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA
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Abstract

Hydrogen injection with B acceptor neutralization in p-type Si etched in HNOs and HF acid mixtures has been confirmed by isotopic [D] substitution and secondary ion mass spectrometry [SIMS] profiling. Quantitative measurements of the near-surface Injected hydrogen were made following field-aided, in-bulk transport [H+ drift] in reverse-bias annealed Schottky diodes from etched, B-doped Si. Chemical-etch injection is found to be self limiting with neutralization observed over a depth which is characteristic of the base material acceptor concentration and in the range 6–8 extrinsic Debye lengths, indicating that holes are essential in the injection mechanism. An effective diffusivity for hydrogen in etched p-Si of ∼ 2 × 10−9 cm2 s−1 was measured [300 K], considerably higher than previously reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 285
Copyright
Copyright © Materials Research Society 1988

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References

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