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Hydrogen Passivation of Doped and Undoped Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M. Stutzmann ,
C.P. Herrero ,
M. Ingels  and
A. Breitschwerdt
M. Stutzmann
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
C.P. Herrero
Affiliation:
Instituto de Ciencia de Materiales, Serrano, 115 dpdo, 28006 Madrid, Spain
M. Ingels
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
A. Breitschwerdt
Affiliation:
Max-Planck-Institut ffir Festkörperforschung, D-7000 Stuttgart 80, FRG
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Abstract

The effect of hydrogen plasma treatment on the properties of undoped and doped microcrystalline silicon are investigated by Raman and infrared spectroscopy, conductivity measurements, hydrogen effusion, and subgap absorption. It is found that hydrogen causes a passivation of dopant atoms similar to that seen in crystalline silicon. However, the efficiency of the dopant passivation appears to be smaller in μc-Si, and the vibrational spectra of dopants and hydrogen show distinct broadening due to local disorder. It is suggested that intergrain regions may efficiently getter atomic hydrogen introduced from the plasma and also provide the origin for a weakly bound hydrogen phase observed in the effusion experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 189
Copyright
Copyright © Materials Research Society 1990

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