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Hydrogen Radical Etching Effect on Carbon Nanotube Growth

Published online by Cambridge University Press:  01 February 2011

Hiroshi Nagayoshi ,
Hiroaki Sato ,
Suzuka Nishimura  and
Kazutaka Terashima
Hiroshi Nagayoshi
Affiliation:
nagayosi@tokyo-ct.ac.jp, Tokyo National College of Technology, 1220-2, Kunygida-machi, Hachoji, Tokyo, 1938610, Japan, +81-4268-5392
Hiroaki Sato
Affiliation:
nagayosi@r2.diom.ne.jp, Shonan Institute of Technology, Japan
Suzuka Nishimura
Affiliation:
nagayosi@r2.diom.ne.jp, Shonan Institute of Technology, Japan
Kazutaka Terashima
Affiliation:
nagayosi@r2.diom.ne.jp, Shonan Institute of Technology, Japan
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Abstract

The hydrogen microwave remote plasma CVD was introduced to fabricate carbon nanotubes(CNTs). C2H2 or CH4, used as source gas react with hydrogen radicals introduced from the cavity. In this experiment, hydrogen radical etching effect on the substrate surface could be controlled independently. We confirmed CNTs growth at 400°C under adequate hydrogen radical etching effect on the substrate surface. The result directly suggests that the etching effect of hydrogen radicals on the reaction surface contribute to the low temperature growth of CNTs. The CNT thickness did not depend on the hydrogen radical etching effect but the catalyst layer thickness.

Keywords

Cdevicesfield emission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 890: Symposium Y – Surface Engineering for Manufacturing Applications , 2005 , 0890-Y08-12
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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