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Hyperthermal H Atom Reactions on D/Si(100)

Published online by Cambridge University Press:  21 February 2011

Steven A. Buntin
Steven A. Buntin*
Affiliation:
National institute of Standards and Technology Gaithersburg, MD 20899
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Abstract

A photolytic source of H atoms is used to probe abstraction and adsorption reactions on the D/Si(100) monodeuteride surface. Surface H and D coverages are determined for H atom exposures, with incident average kinetic energies of 1.0 and 2.8 eV. the D atom depletion probability per incident H atom is 0.3±0.2 for both kinetic energies, and is likely due to abstraction. these results, together with previous studies, indicate that the rates of depletion of surface D and the uptake of H are nominally independent of H atom kinetic energy over the range of about 0.3 to nearly 3 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 227
Copyright
Copyright © Materials Research Society 1995

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