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IIIB- Nitride Semiconductors for High Temperature Electronic Applications

Published online by Cambridge University Press:  10 February 2011

X. Bai ,
D. M. Hill  and
M. E. Kordesch
X. Bai
Affiliation:
Department of Physics and Astronomy, kordesch@helios.phy.ohiou.edu, Ohio University, Athens OH 45701
D. M. Hill
Affiliation:
Department of Physics and Astronomy, kordesch@helios.phy.ohiou.edu, Ohio University, Athens OH 45701
M. E. Kordesch
Affiliation:
Department of Physics and Astronomy, kordesch@helios.phy.ohiou.edu, Ohio University, Athens OH 45701
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Abstract

Thin films of ScN and YN were grown on silicon, quartz and sapphire using metal evaporation and an RF atomic nitrogen source. YN decomposes on contact with water vapor, and only AlN capped films could be stabilized. ScN is stable in air and water, and thin films of this material deposited at temperatures between 300 and 900 °C show a substrate-dependent film texture. Typical growth rates were ∼ 0.1 nm/second with a 300W N discharge at about 0.1 mTorr Nitrogen pressure. Structural characterization by x-ray diffraction, infrared transmission spectroscopy and Hall effect measurements on n-type ScN and the fabrication of p-n junctions of n- type ScN with silicon are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 529
Copyright
Copyright © Materials Research Society 1999

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References

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