Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-21T11:09:37.549Z Has data issue: false hasContentIssue false
  • English
  • Français

II-VI Semiconductor Heterostructures: Pointers to Appropriate Analysis Techniques

Published online by Cambridge University Press:  25 February 2011

Erica G. Bithell
Erica G. Bithell*
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK
Get access

Abstract

Approximate methods are used, for a variety of II–VI semiconductor alloys, to estimate the sensitivity to composition change of quantitative transmission electron microscopy techniques which have proved successful in characterising III–V heterostructures. It is shown that bright field thickness fringe matching at the [001] axis is likely to prove relatively more successful than 200 dark field intensity measurement for many alloy systems. It is also noted that alternative methods would be necessary if quantitative characterisation of (Mn,Zn) compounds were required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 433
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chew, N.G. and Cullis, A.G., Appl. Phys. Lett. 44, 142 (1984).Google Scholar
2. Bithell, E.G. and Stobbs, W.M., J. Appl. Phys. in press (1991).Google Scholar
3. Jones, P.M., Rackham, G.M. and Steeds, J.W., Proc. Roy. Soc. Lond. A354, 197 (1977).Google Scholar
4. Bithell, E.G. and Stobbs, W.M., Phil. Mag. A60, 39 (1989).Google Scholar
5. Kakibayashi, H. and Nagata, F., Jap. J. Appl. Phys. 25, 1644 (1986).Google Scholar
6. Bithell, E.G. and Stobbs, W.M., Phil. Mag. in press (1990).Google Scholar
7. Schetzina, J.F., Giles, N.C., Hwang, S. and Harper, R.L. in Growth and Optical Properties of Wide-Gat II-VI Low-Dimensional Semiconductors, edited by Mcgill, T.C., Torres, C.M. Sotomayor and Gebhardt, W. (NATO ASI Series: Plenum Press, New York, 1988), p. 129.Google Scholar
8. Hansen, M., Constitution of Binary Alloys (McGraw-Hill, New York, 1958); also First Supplement (R.P. Elliot, 1965) and Second Supplement (F.A. Shunk, 1969).CrossRefGoogle Scholar