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Impact of Hydrogen Dilution on the Properties and Light Induced Changes of A-SI:H Based Materials and Solar Cells

Published online by Cambridge University Press:  15 February 2011

Yeeheng Lee
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
Lihong Jiao
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
Joohyun Koh
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
Hiroyuki Fujiwara
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
Zhou Lu
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
R. W. Collins
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16801
C. R. Wronski
Affiliation:
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16801
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Abstract

Studies have been carried out on a-Si:H materials and corresponding solar cells fabricated with and without hydrogen dilution of silane by rf PECVD. The effect of hydrogen dilution on the growth kinetics and microstructures and their dependence on the substrate temperature have been studied. Hydrogen diluted a-Si:H materials and solar cells exhibit improved properties and higher stability to light induced changes. Distinct differences are found in the electron mobility lifetime (μτ) products and subgap absorption over a wide range of generation rates. Striking differences are also found in the kinetics of light induced degradation in both the materials and their corresponding solar cells. Direct correlations are presented between the degradation kinetics of p(a-SiC:H)/i(a-Si:H)/n(μc-Si) solar cells and those of thin film materials constituting the i-layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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