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Improved Ohmic Contacts to n-Type GaAs, Using Oiboride Diffusion Barriers

Published online by Cambridge University Press:  26 February 2011

Joel R. Shappirio ,
Robert A. Lux ,
John J. Finnegan ,
Donald C. Fox  and
Joseph H. Kwiatkowski
Joel R. Shappirio
Affiliation:
Electronics Technology and Devices Laboratory, LABCOM, Fort Monmouth, New Jersey 07703–5302
Robert A. Lux
Affiliation:
Electronics Technology and Devices Laboratory, LABCOM, Fort Monmouth, New Jersey 07703–5302
John J. Finnegan
Affiliation:
Electronics Technology and Devices Laboratory, LABCOM, Fort Monmouth, New Jersey 07703–5302
Donald C. Fox
Affiliation:
Electronics Technology and Devices Laboratory, LABCOM, Fort Monmouth, New Jersey 07703–5302
Joseph H. Kwiatkowski
Affiliation:
Electronics Technology and Devices Laboratory, LABCOM, Fort Monmouth, New Jersey 07703–5302
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Abstract

Ohmic contacts employing Au/Metal/Au/Ge/Ni (Metal=Ni or. TiB2) to n-type GaAs have been investigated. Alloying of the contacts, performed by both optical (rapid thermal) and strip heater methods, resulted in very low specific contact resistivities for the samples employing the TiB2 diffusion barrier. Such contacts are shown to be stable on aging at 350C for 180 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 427
Copyright
Copyright © Materials Research Society 1986

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References

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