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Improved Stability of Amorphous Silicon by Post-Deposition Fluorine Implantation

Published online by Cambridge University Press:  26 February 2011

Ruud E. I. Schropp
Ruud E. I. Schropp*
Affiliation:
Department of Applied Physics, University of Groningen, The Netherlands.
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Abstract

In this paper it is demonstrated for the first time that the material properties of amorphous silicon films deposited from a pure silane plasma can be improved by an appropriate fluorine implantation. It is shown that the field-effect density of states is reduced by this treatment, and that the instability induced by different treatments is reduced. This technique is of particular interest for the fabrication of thin film transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 237
Copyright
Copyright © Materials Research Society 1988

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