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In as a Surfactant for the Growth of AlGaN/GaN Heterostructures by Plasma Assisted MBE

Published online by Cambridge University Press:  11 February 2011

E. Monroy ,
N. Gogneau ,
E. Bellet-Amalnc ,
F. Enjalbert ,
J. Barjon ,
D. Jalabert ,
J. Brault ,
Le Si Dang  and
B. Daudin
E. Monroy
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
N. Gogneau
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
E. Bellet-Amalnc
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
F. Enjalbert
Affiliation:
Laboratoire de pectrométrie Physique, Université Joseph Fourier, Grenoble, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
J. Barjon
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
D. Jalabert
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
J. Brault
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
Le Si Dang
Affiliation:
Laboratoire de pectrométrie Physique, Université Joseph Fourier, Grenoble, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
B. Daudin
Affiliation:
Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France, Equipe mixte CEA-CNR-UJF Nanophysique et emiconducteurs
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Abstract

In this paper, we study the surfactant capability of In for the growth of AlGaN/GaN heterostructures by plasma-assisted molecular beam epitaxy. Growth conditions were determined to have a self-regulated 1×1 In adlayer on AlxGa1-xN (0001). The presence of this In film favors two dimensional growth of AlGaN under stoichiometric conditions, and inhibits the formation of metal droplets on the surface. The quality of these layers was assessed by high resolution X-ray diffraction, atomic force microscopy and photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.1
Copyright
Copyright © Materials Research Society 2003

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References

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