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In Situ Characterization of Ain Films Grown on Silicon by MOCVD

Published online by Cambridge University Press:  10 February 2011

A. D. Serra  and
H. H. Richardson
A. D. Serra
Affiliation:
Department of Chemistry, Ohio University, Athens, OH 45701, richards@helios.phy.ohiou.edu
H. H. Richardson
Affiliation:
Department of Chemistry, Ohio University, Athens, OH 45701, richards@helios.phy.ohiou.edu
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Abstract

Films of AIN were grown on Si under vacuum pressure at 900°C and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 445
Copyright
Copyright © Materials Research Society 1998

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References

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