Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-20T05:16:15.783Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy

Published online by Cambridge University Press:  22 February 2011

J. A. Roth ,
T. J. De Lyon  and
M. E. Adel
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
T. J. De Lyon
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
M. E. Adel
Affiliation:
CI Systems, Ltd., Migdal Haemek, Israel
Get access

Abstract

The use of band-edge reflection spectroscopy (BRS) to determine the substrate temperature during MBE is reviewed. Data are presented for Si, GaAs, InP and CdZnTe substrates, and the use of BRS during the growth of ZnTe on Si is demonstrated. We discuss complications that arise due to optical interference in the epitaxial layers, and methods to compensate for the effects of interference are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 353
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hellman, E. S. and Harris, J. S., J. Cryst. Growth 81, 38 (1987).CrossRefGoogle Scholar
2. Panish, M. B. and Casey, H. C., J. Appl. Phys. 40, 163 (1969).CrossRefGoogle Scholar
3. Thurmond, C. D., J. Electrochem. Soc. 122, 1133 (1975)..CrossRefGoogle Scholar
4. Powell, R. A. and Kirillov, D., MIMIC Phase III Contract No. DAALO1-89-C-0907, January 1991; D. Kirillov and R. A. Powell, U. S. Patent No. 5,118,200, June 2, 1992.Google Scholar
5. Adel, M. E., Ish-Shalom, Y., Mangan, S., Cabib, D. and Gilboa, H., SPIE Proc. 1803, 55 (1992).Google Scholar
6. Weilmeier, M. K., Colbow, K. M., Tiedje, T., Buuren, T. Van and Xu, Li, Can. J. Phys. 69, 422 (1991).CrossRefGoogle Scholar
7. Johnson, S. R., Lavoie, C., Tiedje, T. and Mackenzie, J. A., J. Vac. Sci. Technol. B11, 1007 (1993).CrossRefGoogle Scholar