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InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection

Published online by Cambridge University Press:  25 February 2011

S. M. Bedair ,
T. P. Humphreys ,
P. K. Chaing  and
T. Katsuyama
S. M. Bedair
Affiliation:
Electrical and Computer Engineering Department North Carolina State University Raleigh, North Carolina 27695-7911
T. P. Humphreys
Affiliation:
Electrical and Computer Engineering Department North Carolina State University Raleigh, North Carolina 27695-7911
P. K. Chaing
Affiliation:
Electrical and Computer Engineering Department North Carolina State University Raleigh, North Carolina 27695-7911
T. Katsuyama
Affiliation:
Electrical and Computer Engineering Department North Carolina State University Raleigh, North Carolina 27695-7911
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Abstract

InSb1−x Bix (0.01 < × < 0.14) and InAsSbBi quaternary alloys are potentially attractive materials for the development of semiconductor infrared detectors covering the 8–14 μm range [1,2,3].

We report for the first time, MOCVD growth of InSo1−x Bix (0.01 < × < 0.14) and InAs1−x−y Sbx Biy with 0.5 < × < 0.7 and 0.01 < y < 0.04 on both GaAs and InSb substrates using AsH3, TMSb, TEI and TMBi. Electrical measurements of the undoped InSo0.99 Bi0.01 shows a background carrier concentration of approximately 1016/cm3 and a room temperature mobility of 20,215 cm2/V.sec. To-date, these are the best reported electrical measurements for this ternary alloy.

The formation of a secondary Bi phase and single crystal growth of metallic bismuth-antimony at the surface of InSo1−x Bix which results in deterioration of morphology with increasing values of x is also investigated. A wide range of analytic techniques, including SEM, EDX, electron microprobe and AES have been employed in our surface analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 447
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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